Posters | González Burguete Engineering Design | GB Group | London

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Direct growth of InAs/GaSb type II superlattice photodetector on silicon substrates

Demonstration of Si based InAs/GaSb type II superlattice p-i-photodetector

Mid-wave Infrared InAs/GaSb type II superlattice photodetector on GaAs substrates

Direct growth of InAs/GaSb type II superlattice photodetector on silicon substrates

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